2SB1027

S MD Type Silicon PNP Epitaxial 2SB1027 Transistors Features Low frequency amplifier Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature *1 PW 10 ms, Duty cycle 20% Symbol VCBO VCEO VEBO IC iC(peak)*1 PC*2 Tj Tstg Rating -180 -160 -5 -1.5 -3 1 150 -55 to 150 Unit V V V A A W *2 Value on the alumina ceramic board (12.5X 20X 0.7 mm) Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) VBE Testconditons IC = -1 mA, IE = 0 IC = -10 mA, RBE = IE = -1 mA, IC = 0 VCB = -160 V, IE = 0 VCE = -5 V, IC = -0.15 A, VCE = -5 V, IC = -0.5 A, IC = -0.5 A, IB = -50 mA, VCE = -5 V, IC = -0.15 A, 60 30 -1.0 -0.9 V V Min -180 -120 -5 -10 320 Typ Max Unit V V V ìA hFE Classification Marking hFE EH 60 to 120 EJ 100 to 200 EK 160 to 320 www.kexin.com.cn 1