2SB1073

S MD Type Silicon PNP Epitaxial Planar Type 2SB1073 Transistors Features Low collector-emitter saturation voltage VCE(sat) Large peak collector current ICP Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating -30 -20 -7 -4 -7 1 150 -55 to +150 Unit V V V A mA mW Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Emitter-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCBO VCEO VEBO ICBO IEBO hFE Testconditons IC = -10 ìA, IE = 0 IC = -1 mA, IB = 0 IE = -10 ìA, IC = 0 VCB = -30 V, IE = 0 VEB = -7 V, IC = 0 VCE = -2 V, IC = -2 A 120 -0.6 120 4 Min -30 -20 -7 -0.1 -0.1 315 -1.0 V MHz pF Typ Max Unit V V V ìA ìA VCE(sat) IC = -3 A, IB = - 0.1 A fT Cob VCB = -6 V, IE = 50 mA, f = 200 MHz VCB = -20 V, IE = 0, f = 1 MHz hFE Classification Marking hFE IP 120 205 IQ 180 315 www.kexin.com.cn 1