2SB1114

S MD Type PNP Silicon Epitaxial Transistor 2SB1114 Transistors Features World standard miniature package. High DC current gain hFE=135 to 600. Low VCE(sat): VCE(sat)=-0.3V at 1.5A Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current (pulse) * Total power dissipation Junction temperature Storage temperature range * Pulsed: PW 10 ms, duty cycle 50% Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating -20 -20 -6 -2 -3 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW 350 ìs, duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 16 V, IE = 0 VEB = -6.0 V, IC = 0 VCE = -2.0 V, IC = -100 mA VCE = -2.0 V, IC = -2.0mA VCE(sat) IC = -1.5A, IB = -50 mA VBE(sat) IC = -1.5A, IB = -50 mA VBE fT Cob VCE = -6.0 V, IC = -100 mA VCE = -10 V, IE = 50 mA VCB = -10 V, IE = 0 , f = 1.0 MHz 135 40 -0.3 -1.05 -0.5 -1.2 V V V MHz pF 350 Min Typ Max -100 -100 600 Unit nA nA -0.65 -0.68 -0.75 180 60 hFE Classification Marking hFE ZM 135 270 ZL 200 400 ZK 300 600 www.kexin.com.cn 1