2SB1115A

S MD Type PNP Silicon Epitaxial Transistor 2SB1115A Transistors Features World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current (pulse) * Total power dissipation Junction temperature Storage temperature range * Pulsed: PW 10 ms, duty cycle 50% Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating -80 -60 -6 -1 -2 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW 350 ìs, duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = -80 V, IE = 0 VEB = -6.0 V, IC = 0 VCE = -2.0 V, IC = -100 mA VCE = -2.0 V, IC = -1.0A VCE(sat) IC = -1.0A, IB = -50 mA VBE(sat) IC = -1.0A, IB = -50 mA VBE fT Cob VCE = -2.0 V, IC = -50 mA VCE = -2.0 V, IE = -100 mA VCB = -10 V, IE = 0 , f = 1.0 MHz -600 80 120 25 135 100 340 200 -0.2 -0.9 -0.3 -1.2 -700 V V V MHz pF Min Typ Max -100 -100 400 Unit nA nA hFE Classification Marking hFE YQ 135 270 YP 200 400 www.kexin.com.cn 1