2SB1118

S MD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1118 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -20 -15 -5 -0.7 -1.5 500 150 -55 to +150 Unit V V V A A mW www.kexin.com.cn 1 SMD Type 2SB1118 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Output capacitance Symbol ICBO IEBO hFE fT VCE(sat) Testconditons VCB = -15V , IE = 0 VCB = -4V , IE = 0 VCE = -2V , IC = -50mA VCE = -2V , IC = -500mA VCE = -10V , IC = -50mA IC = -5mA , IB = -0.5mA IC = -100mA , IB = -10mA VBE(sat) IC = -100mA , IB = -10mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 Cob VCB = -10V , f = 1MHz Transistors Min Typ Max -0.1 -0.1 Unit ìA ìA 140 60 250 -15 -60 -0.8 -20 -15 -5 13 560 MHz -35 -120 -1.2 V V V V pF V hFE Classification Marking Rank hFE S 140 280 BA T 200 400 U 280 560 2 www.kexin.com.cn