2SB1119

S MD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1119 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -25 -25 -5 -1 -2 500 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Output capacitance Symbol ICBO IEBO hFE fT Testconditons VCB = -20V , IE = 0 VCB = -4V , IE = 0 VCE = -2V , IC = -50mA VCE = -2V , IC = -1A VCE = -10V , IC = -50mA 100 40 180 -0.15 -0.85 -25 -25 -5 52 -0.7 -1.2 MHz V V V V V pF Min Typ Max -0.1 -0.1 560 Unit ìA ìA VCE(sat) IC = -500mA , IB = -50mA VBE(sat) IC = -500mA , IB = -50mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 Cob VCB = -10V , f = 1MHz hFE Classification Marking Rank hFE R 100 200 S 140 280 BB T 200 400 U 280 560 www.kexin.com.cn 1