2SB1121

S MD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1121 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -30 -25 -6 -2 -5 500 150 -55 to +150 Unit V V V A A mW www.kexin.com.cn 1 SMD Type 2SB1121 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Output capacitance Turn-on time Symbol ICBO IEBO hFE fT Testconditons VCB = -20V , IE = 0 VCB = -4V , IE = 0 VCE = -2V , IC = -100mA VCE = -10V , IC = -50mA Transistors Min Typ Max -0.1 -0.1 Unit ìA ìA 100 150 -0.35 -0.85 -30 -25 -6 32 60 560 MHz -0.6 -1.2 V V V V V pF ns VCE(sat) IC = -1.5A , IB = -75mA VBE(sat) IC = -1.5A , IB = -75mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 Cob ton VCB = -10V , f = 1MHz Storage time tstg 350 ns Fall time tf 25 ns hFE Classification Marking Rank hFE 100 E 200 160 BC F 320 280 G 560 2 www.kexin.com.cn