2SB1122

S MD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1122 Features Adoption of FBET process.. Very small size making it easy to provide highdensity hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -60 -50 -5 -1 -2 500 150 -55 to +150 Unit V V V A A mW www.kexin.com.cn 1 SMD Type 2SB1122 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -50V , IE = 0 VCB = -4V , IE = 0 VCE = -2V , IC = -100mA VCE = -10V , IC = -50mA VCB = -10V , f = 1MHz Transistors Min Typ Max -100 -100 Unit nA nA 100 150 12 -180 -0.9 -60 -50 -5 40 560 MHz pF -500 -1.2 V V V V V ns VCE(sat) IC = -500mA , IB = -50mA VBE(sat) IC = -500mA , IB = -50mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 ton Storage time tstg 300 ns Fall time tf 30 ns hFE Classification Marking Rank hFE 100 R 200 140 S 280 200 BE T 400 280 U 560 2 www.kexin.com.cn