2SB1123

S MD Type High-Current Switching Applications 2SB1123 Transistors Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Mounted on a ceramic board (250mm250.8mm) Jumction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating -60 -50 -6 -2 -4 0.5 1.3 150 -55 to +150 Unit V V V A A W W www.kexin.com.cn 1 SMD Type 2SB1123 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter-base cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Turn-ON Time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -50V , IE = 0 VEB = -4 V , IC = 0 VCE = -2V , IC = -100mA VCE = -10V , IC = -50mA VCB = -10V , f = 1MHz Transistors Min Typ Max -100 -100 Unit nA nA 100 150 22 -0.3 -0.9 -60 -50 -6 60 560 MHz pF -0.7 -1.2 V V V V V ns VCE(sat) IC = -1A , IB = -50mA VBE(sat) IC = -1A , IB = -50mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 ton Storage Time tstg 450 ns Fall Time tf 30 ns hFE Classification Marking Rank hFE 100 R 200 140 S 280 200 BF T 400 280 U 560 2 www.kexin.com.cn