2SB1124

S MD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1124 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -60 -50 -6 -3 -6 500 150 -55 to +150 Unit V V V A A mW www.kexin.com.cn 1 SMD Type 2SB1124 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -40V , IE = 0 VCB = -4V , IE = 0 VCE = -2V , IC = -100mA VCE = -10V , IC = -50mA VCB = -10V , f = 1MHz Transistors Min Typ Max -1 -1 Unit ìA ìA 100 150 39 -0.35 -0.94 -60 -50 -6 70 560 MHz pF -0.7 -1.2 V V V V V ns VCE(sat) IC = -2A , IB = -100mA VBE(sat) IC = -2A , IB = -100mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 ton Storage time tstg 450 ns Fall time tf 35 ns hFE Classification Marking Rank hFE 100 R 200 140 S 280 200 BG T 400 280 U 560 2 www.kexin.com.cn