2SB1132

S MD Type Medium Power Transistor 2SB1132 Transistors Features Low VCE(sat) Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Single pulse, PW =100ms Collector Power Dissipation Jumction temperature Storage temperature Range * mounted on a 40x40x0.7mm ceramic board. PC * Tj Tstg Symbol VCBO VCEO VEBO IC Rating -40 -32 -5 -1 -2 0.5 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Transition Frequency Collector Output Capacitance Symbol ICBO IEBO Testconditons VCB = -20V , IE = 0 VEB = -4V , IC = 0 -40 -32 -5 82 150 20 30 390 MHz pF Min Typ Max -0.5 -0.5 Unit ìA ìA V V V(BR)CBO IC = -50uA , IE = 0 V(BR)CEO IC = -1mA , IB = 0 V(BR)EBO IE = -50uA hFE fT Cob VCE = -3V , IC = -0.1A VCE = -5V , IE = 50mA , f = 30MHz VCB = -10V , IE = 0 , f = 1MHz hFE Classification Marking Rank hFE 82 P 180 120 BA Q 270 180 R 390 www.kexin.com.cn 1 SMD Type 2SB1132 Electrical Characteristics Curves Transistors 2 www.kexin.com.cn SMD Type 2SB1132 Transistors www.kexin.com.cn 3