2SB1181

S MD Type Power Transistor 2SB1181 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Hight breakdown voltage and high current. Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse Collector power dissipation Collector power dissipation (Tc=25 ) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC PC Tj Tstg Rating -80 -80 -5 -1 -2 1 10 150 -55 to +150 Unit V V V A A W W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=-50ìA IC=-1mA IE=-50ìA VCB=-60V VEB=-4V Testconditons Min -80 -80 -5 -1 -1 -0.4 82 100 25 390 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC= -500mA, IB= -50mA hFE fT Cob VCE= -3V, IC= -0.1A VCE= -10V, IE=50mA, f=100MHz VCB= -10V,IE=0A,f=1MHz hFE Classification Rank hFE P 82 180 Q 120 270 R 180 390 3 .8 0 www.kexin.com.cn 1