2SB1188

S MD Type Medium Power Transistor 2SB1188 Transistors Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Collector current Collector power dissipation Jumction temperature Storage temperature * PW=100ms Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg Rating -40 -32 -5 -2 -3 0.5 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltae Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-Emitter Saturation Voltage DC current transfer ratio Transition frequency Output Capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO IC = -50 A IC = -1mA IE = -50 A VCB = -20V VEB = -4V -0.5 82 100 50 Testconditons Min -40 -32 -5 -1 -1 -0.8 390 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC = -2A , IB = -0.2A hFE fT Cob VCE = -3V , IC = -0.5A VCE = -5V , IE = 0.5A , f = 30MHz VCB = -10V , IE = 0, f = 1MHz hFE Classification Marking Rank hFE P 82 180 BC Q 120 270 R 180 390 www.kexin.com.cn 1