2SB1189

S MD Type Medium Power Transistor 2SB1189 Transistors Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Collector current Collector power dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -80 -80 -5 -0.7 0.5 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltae Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-Emitter Saturation Voltage DC current transfer ratio Transition frequency Output Capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO IC = -50 A IC = -2mA IE = -50 A VCB = -50V VEB = -4V -0.2 82 100 14 20 Testconditons Min -80 -80 -5 -0.5 -0.5 -0.4 390 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC = -500mA , IB = -50mA hFE fT Cob VCE = -3V , IC = -0.1A VCE = -10V , IE = 50mA , f = 100MHz VCB = -10V , IE = 0, f = 1MHz hFE Classification Marking Rank hFE P 82 180 BD Q 120 270 R 180 390 www.kexin.com.cn 1