2SB1201

S MD Type High-Current Switching Applications 2SB1201 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-to-emitter saturation voltage. Fast switching speed. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -60 -50 -6 -2 -4 0.8 150 -55 to +150 Unit V V V A A W 3 .8 0 www.kexin.com.cn 1 SMD Type 2SB1201 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -50V , IE = 0 VEB = -4V , IC = 0 VCE = -2V , IC = -100mA VCE = -2V , IC = -1.5A VCE = -10V , IC = -50mA VCB = -10V , f = 1MHz 100 40 Min Transistors Typ Max -100 -100 560 Unit nA nA 150 22 -0.3 -0.9 -60 -50 -6 60 -0.7 -1.2 MHz pF V V V V V ns VCE(sat) IC = -1A , IB = -50mA VBE(sat) IC = -1A , IB = -50mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 ton Storage time tstg 450 ns Fall time tf 30 ns hFE Classification Rank hFE 100 R 200 140 S 280 200 T 400 280 U 560 2 www.kexin.com.cn