2SB1205

S MD Type Transistors Strobe High-Current Switching Applications 2SB1205 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low saturation voltage. Fast switching speed. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 Large current capacity. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation TC = 25 Jumction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating -25 -20 -5 -5 -8 -0.5 1 10 150 -55 to +150 Unit V V V A A A W W 3 .8 0 www.kexin.com.cn 1 SMD Type 2SB1205 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -20V , IE = 0 VEB = -4V , IC = 0 VCE = -2V , IC = -500mA VCE = -2V , IC = -4A VCE = -5V , IC = -200mA VCB = -10V , f = 1MHz Transistors Min Typ Max -500 -500 Unit ìA ìA 100 60 320 60 -250 -1 -25 -20 -5 40 400 MHz pF -500 -1.3 mV V V V V ns VCE(sat) IC = -3A , IB = -60mA VBE(sat) IC = -3A , IB = -60mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO ton IE = -10ìA , IC = 0 Storage time tstg 200 ns Fall time tf 10 ns hFE Classification Rank hFE R 100 200 S 140 280 T 200 400 2 www.kexin.com.cn