2SB1216

S MD Type High-Current Switching Applications 2SB1216 TO-252 Transistors Features Low collector-to-emitter saturation voltage. Good linearity of hFE. High fT. +0.2 9.70 -0.2 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Fast switching time. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation TC = 25 Jumction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating -120 -100 -6 -4 -8 1 20 150 -55 to +150 Unit V V V A A W W 3 .8 0 www.kexin.com.cn 1 SMD Type 2SB1216 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -100V , IE = 0 VEB = -4V , IC = 0 VCE = -5V , IC = -0.5A VCE = -5V , IC = -3A VCE = -10V , IC = -0.5A VCB = -10V , f = 1MHz Transistors Min Typ Max -1 -1 Unit ìA ìA 70 40 130 65 -200 -0.9 -120 -100 -6 100 400 MHz pF -500 -1.2 mV V V V V ns VCE(sat) IC = -2A , IB = -0.2A VBE(sat) IC = -2A , IB = -0.2A V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO ton IE = -10ìA , IC = 0 Storage time tstg 800 ns Fall time tf 50 ns hFE Classification Rank hFE Q 70 140 R 100 200 S 140 280 T 200 400 2 www.kexin.com.cn