2SB1219A

SMD S MD Type Silicon PNP Epitaxial Planar Type 2SB1219A Transistors IC Features Large collector current IC. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating -60 -50 -5 -1 -500 150 150 -55 to +150 Unit V V V A mA mW Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCBO VCEO VEBO ICBO hFE Testconditons IC = -10 ìA, IE = 0 IC = -2 mA, IB = 0 IE = -10 ìA, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IC = -150 mA 85 -0.35 -1.1 200 6 15 Min -60 -50 -5 -0.1 340 -0.6 -1.5 MHz pF V Typ Max Unit V V V ìA VCE(sat) IC = -300 mA, IB = -30 mA VBE(sat) IC = -300 mA, IB = -30 mA fT Cob VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz hFE Classification Marking hFE DQ 85 170 DR 120 240 DS 170 340 D 85 340 www.kexin.com.cn 1