2SB1260

S MD Type Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Transistors Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=100ms Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg Rating -80 -80 -5 -1 -2 0.5 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE IC=-50ìA IC=-1mA IE=-50ìA VCB=-60V VEB=-4V VCE=-3V, IC=-0.1A 82 Testconditons Min -80 -80 -5 -1 -1 390 -0.4 100 25 V MHz pF Typ Max Unit V V V ìA ìA VCE(sat) IC=-500mA,IB=-50mA Cob fT VCE=-5V, IE=50mA, f=30MHz VCB=-10V, IE=0A, f=1MHz hFE Classification Marking Rank hFE P 82 180 BE Q 120 270 R 180 390 www.kexin.com.cn 1