2SB1261-Z

S MD Type PNP Silicon Epitaxial Transistor 2SB1261-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features Low VCE(sat): VCE(sat) High hFE. -0.3V. +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current pulse *1 Base current Total power dissipation Junction temperature Storage temperature range *1 PW 10ms,duty cycle 50%. Symbol VCBO VCEO VEBO IC ICP IB PT Tj Tstg Rating -60 -60 -7 -3 -5 -0.5 2 *2 10 150 -55 to +150 Unit V V V A A A W W *2 When mounted on ceramic substrate of 7.5cm2 X0.7mm 3 .8 0 www.kexin.com.cn 1 SMD Type 2SB1261-Z Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Fall time * Pulsed: PW 350 ìs, duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = -60 V, IE = 0 VEB = -7.0 V, IC = 0 VCE = -2.0 V, IC = -0.6A VCE = -2.0 V, IC = -2A VCE(sat) IC = -1.5A, IB = -0.15A VBE(sat) IC = -1.5A, IB = -0.15A fT Cob ton tstg tf IC = -1.0 A,IB1 = -IB2 = -0.1 A, VCC = 10 V, RL=10Ù VCE = -5.0 V, IE = 1.5A VCB = -10 V, IE = 0 , f = 1.0 MHz Transistors Min Typ Max -10 -10 Unit ìA ìA 100 50 -0.2 -0.94 50 40 0.15 0.5 0.1 400 -0.3 -1.2 V V MHz pF 0.5 2.0 0.5 ìs ìs ìs hFE Classification Rank hFE M 100 200 L 160 320 K 200 400 2 www.kexin.com.cn