2SB1295

SMD S MD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SB1295 SOT-23 Unit: mm Features Large current capacity. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 smaller and slimer. 0.55 Very small-sized package permitting sets to be made +0.1 1.3-0.1 Low collector to emitter saturation voltage. 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -15 -15 -5 -0.8 -3 200 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -12V , IE = 0 VEB = -4V , IC = 0 VCE = -2V , IC = -50mA VCE = -2V , IC = -50mA VCB = -10V , f = 1MHz 135 300 15 -10 -100 -0.9 -15 -15 -5 -25 -200 -1.2 Min Typ Max -100 -100 600 MHz pF mV mV V V V V Unit nA nA VCE(sat) IC = -5mA , IB = -0.5mA VCE(sat) IC = -400mA , IB = -20mA VBE(sat) IC = -400mA , IB =-20mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 hFE Classification Marking Rank hFE 135 5 270 200 UL 6 400 300 7 600 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1