2SB1302

S MD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1302 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -25 -20 -5 -5 -8 1.3 150 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type 2SB1302 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -20V , IE = 0 VEB = -4V , IE = 0 VCE = -2V , IC = -500mA VCE = -5V , IC = -200mA VCB = -10V , f = 1MHz Transistors Min Typ Max -500 -500 Unit nA nA 100 320 60 -250 -1 -25 -20 -5 40 400 MHz pF -500 -1.3 V V V V VCE(sat) IC = -3A , IB = -60mA VBE(sat) IC = -3A , IB = -60mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 ton ns Storage time tstg 200 ns Fall time tf 10 ns hFE Classification Marking Rank hFE 100 R 200 140 BJ S 280 200 T 400 2 www.kexin.com.cn