2SB1308

S MD Type Power Transistor 2SB1308 Transistors Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg Rating -30 -20 -6 -3 -5 0.5 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE IC=-50ìA IC=-1mA IE=-50ìA VCB=-20V VEB=-5V VCE=-2V, IC=-0.5A 82 Testconditons Min -30 -20 -6 -0.5 -0.5 390 -0.45 120 60 V MHz pF Typ Max Unit V V V ìA ìA VCE(sat) IC=-1.5A,IB=-0.15A Cob fT VCE=-6V, IE=50mA, f=100MHz VCB=-20V, IE=0A, f=1MHz hFE Classification Marking Rank hFE P 82 180 BF Q 120 270 R 180 390 www.kexin.com.cn 1