2SB1323

S MD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1323 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Electrical Connection Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature * Mounted on ceramic board 250mm X0.8mm 2 Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg Rating -40 -30 -6 -3 -5 1.5 150 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type 2SB1323 Electrical Characteristics Ta = 25 Parameter Collector cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter on state voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Base-emitter on state voltage Diode forward voltage Base-emitter resistance Base resistance Symbol ICBO hFE fT Cob VCE(sat) VBE(ON) Testconditons VCB = 30V , IE = 0 VCE = -2V , IC = -0.5A VCE = -2V , IC = -2A VCE = -2V , IC = -0.5A VCB = -10V , f = 1MHz IC = -1A , IB = -50mA VCE = -2A , IC = -1A -1 -40 -40 -30 70 50 Min Transistors Typ Max -1 Unit ìA 100 55 -0.18 -2 -0.4 -5 MHz pF V V V V V 1.5 V KÙ 200 Ù V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -10ìA , RBE = V(BR)CEO IC = -10mA , RBE = VF RBE R1 IF=0.5A 0.8 120 160 Marking Marking BK 2 www.kexin.com.cn