2SB1325

S MD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1325 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Electrical Connection Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature * Mounted on ceramic board (250mm X0.8mm) 2 Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg Rating -25 -20 -6 -4 -6 1.5 150 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type 2SB1325 Electrical Characteristics Ta = 25 Parameter Collector cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Base-emitter on state voltage Diode forward voltage Base-emitter resistance Symbol ICBO hFE fT Cob Testconditons VCB = 20V , IE = 0 VCE = -2V , IC = -0.5A VCE = -2V , IC = -3A VCE = -2V , IC = -0.5A VCB = -10V , f = 1MHz Transistors Min Typ Max -1 Unit ìA 70 50 300 60 -0.25 -0.5 -1.5 -25 -25 -20 1.5 1.5 MHz pF V V V V V V KÙ VCE(sat) IC = -3A , IB = -150mA VBE(sat) VCE = -3V , IC = -150mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -10ìA , RBE = V(BR)CEO IC = -10mA , RBE = VF RBE IF=0.5A Marking Marking BM 2 www.kexin.com.cn