2SB1386-R

Transistors SMD Type PNP Transistors 2SB1386 Features 1.70 Low VCE(sat). 0.1 VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type 0.42 0.1 0.46 0.1 PNP silicon transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V IC -5 A Collector current Collector current(Pulse) ICP * -10 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Single pulse, Pw=10ms Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=-50 u A -30 Collector-emitter breakdown voltage BVCEO IC=-1mA -20 V Emitter-base breakdown voltage BVEBO IE=-50 u A -6 V Collector cutoff current ICBO VCB=-20V -0.5 uA Emitter cutoff current IEBO VEB=-5V -0.5 uA -1 V DC current transfer ratio VCE(sat) Collector-emitter saturation voltage hFE Transition frequency fT Output capacitance Cob -0.35 IC=-4A,IB=-0.1A VCE=-2V, IC=-0.5A V 82 390 VCE=-6V, IE=50mA, f=30MHz 120 MHz VCB=-20V, IE=0A, f=1MHz 60 pF hFE Classification Type 2SB1386-P 2SB1386-Q 2SB1386-R Range 82-180 120-270 180-390 Marking BHP* BHQ* BHR* www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB1386 Ƶ Typical Characterisitics COLLECTOR CURRENT : IC (A) -2 -1 - 500m - 200m -100m - 50m - 20m -10m - 5m - 2m - 1m COLLECTOR CURRENT : IC (A) VCE - 2V -5 Ta 100e C -25eC 25e C - 5 - 50mA - 45mA - 40mA - 4 - 35mA A 5k Ta 25e C -30m mA - 25 - 20mA -15mA -3 -10mA 2 - 5mA -1 0.6 - 0.8 -1.0 -1.2 0 1.4 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 0 - 0.4 0.8 1.2 Fig.2 - 2V - 1V 100 50 20 - 1m -2m - 5m -0.01 -0.02 -0.05 -0.1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Grounded emitter propagation characteristics VCE= - 5V 200 5 - 2.0 1.6 1k 500 10 IB 0A - 0.2 - 0.4 0 Ta=25e C 2k DC CURRENT GAIN : hFE -10 0.2 -0.5 - 1 - 2 - 5 -10 COLLECTOR CURRENT : IC (A) Grounded emitter output characteristics Fig.3 DC current gain vs. collector current ( ) VCE 5k - 1V DC CURRENT GAIN : hFE 1k 500 200 Ta 100e C 25e C - 25eC 100 50 20 1k 500 200 50 20 10 5 5 2m -5m -0.01-0.02 0.05- 0.1 -0.2 - 0.5 -1 -2 - 5 -10 -1m -2m -5m - 0.01- 0.02 -0.05 -0.1 -0.2 -0.5 -1 - 2 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) lC/lB 10 -2 -1 -0.5 -0.2 Ta 100e C -0.05 25e C -25e C -0.02 -0.01 - 2m - 5m - 0.01- 0.02 - 0.05 - 0.1 -0.2 - 0.5 -1 - 2 - 5 10 -5 -1 2 Collector-emitter saturation voltage vs. collector current ( ) www.kexin.com.cn Ta 100e C 25e C - 0.2 - 0.1 -25e C - 0.05 - 0.02 - 0.01 - 2m - 5m - 0.01 -0.02 - 0.05 - 0.1 - 0.2 - 0.5 - 1 - 2 - 5 -10 -1 -0.5 -0.2 -0.1 IC/IB 50/1 40/1 /1 30/1 10/1 -0.05 -0.02 -0.01 -2m -5m 0.0 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 10 Collector-emitter saturation voltage vs. collector current ( Collector-emitter saturation voltage vs. collector current ( ) -5 lC/lB 40 -2 - 25e C -1 25e C - 0.5 - 0.2 - 0.1 Ta 100e C - 0.05 - 0.02 - 0.01 - 2m 5m - 0.01- 0.02 - 0.05 - 0.1 - 0.2 - 0.5 - 1 - 2 - 5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.8 Ta 25e C -2 Fig.6 lC/lB 30 - 0.5 -5 COLLECTOR CURRENT : IC (A) -2 COLLECTOR CURRENT : IC (A) Fig.7 - 5 -10 COLLECTOR CURRENT : IC (A) -5 -0.1 Ta 100e C 25e C -25e C 100 10 -1m COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE= - 2V 2k COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE 2k COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 5k COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)  ) Fig.9 Collector-emitter saturation voltage vs. collector current ( ) Transistors SMD Type PNP Transistors 2SB1386 1 000 lC/lB 50 - 25e C -2 25e C Ta 100e C -1 - 0.5 - 0.2 - 0.1 - 0.05 - 0.02 - 0.01 -2m 5m -0.01 - 0.02 - 0.05 -0.1 -0.2 - 0.5 - 1 - 2 Ta 25e C VCE - 6V 500 200 100 50 20 10 5 2 1 1 - 5 - 10 COLLECTOR CURRENT : IC (A) Fig.11 Gain bandwidth product vs. emitter current -1 -2 -5 EMITTER INTPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (A) -10 200 100 50 20 10 - 0.1 - 0.2 0.5 -1 -2 - 5 -10 -20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.12 Collector output capacitance vs. collector-base voltage Ta 25e C *Single nonrepetitive pulse 20 10 5 2 1 500m DC 20 Ta 25e C f 1MHz IE 0A 500 ms 10 s Pw 0m 10 50 - 0.5 500 1000 1000 Pw 100 - 0.2 50 100 200 50 200 10 - 0.1 20 10 100 Ta 25e C f 1MHz IC 0A 500 5 EMITTER CURRENT : IE (mA) Fig.10 Collector-emitter saturation voltage vs. collector current ( ) 1000 2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) -5 TRANSEITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ƶ Typical Characterisitics 200m 100m 50m 20m 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : - VCE (V) Fig.13 Emitter input capacitance vs. emitter-base voltage Fig.14 Safe operation area www.kexin.com.cn 3