2SB1386

S MD Type Low Frequency Transistor 2SB1386 Transistors Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg Rating -30 -20 -6 -5 -10 0.5 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=-50ìA IC=-1mA IE=-50ìA VCB=-20V VEB=-5V Testconditons Min -30 -20 -6 -0.5 -0.5 -1 82 120 60 390 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC=-4A,IB=-0.1A hFE Cob fT VCE=-2V, IC=-0.5A VCE=-6V, IE=50mA, f=30MHz VCB=-20V, IE=0A, f=1MHz hFE Classification Marking Rank hFE P 82 180 BH Q 120 270 R 180 390 www.kexin.com.cn 1