2SB1396

S MD Type Transistors PNP Epitaxial Planar Silicon Transistor 2SB1396 Features Adoption of FBET,MBIT processes Large current capacity Low collector to emitter saturation voltage Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse) Collector dissipation * Junction temperature Storage temperature * Mounted on ceramic PCB (250mm X0.8mm) 2 Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg Rating -15 -10 -7 -3 -5 1.3 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Testconditons VCB = -12V, IE=0 VEB = -6V, IC=0 VCE =-2V , IC = -0.5A VCE =-2V , IC = -3A VCE =-2V , IC = -0.3A VCE = -10V , f=1MHz IC=-1.5A,IB=-30mA IC=-1.5A,IB=-30mA IC=-10ìA,IE=0 IC=-1mA,RBE= IE=-10ìA,IC=0 -15 -10 -7 140 70 400 26 -220 -0.9 -400 -1.2 GHz pF mV V V V V Min Typ Max -100 -100 560 Unit ìA ìA hFE Classification Marking Rank hFE S 140 280 BO T 200 400 U 280 560 www.kexin.com.cn 1