2SB1407S

S MD Type Silicon PNP Epitaxial 2SB1407S TO-252 Transistors Features Low frequency power amplifier. Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -35 -35 -5 -2.5 -3 18 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Symbol Testconditons Min -35 -35 -5 -20 60 20 -1.5 -1.0 V V 320 Typ Max Unit V V V ìA V(BR)CBO IC = -1 mA, IE = 0 V(BR)CEO IC = -10 mA, RBE = V(BR)EBO IE = -1 mA, IC = 0 ICBO hFE VBE VCB = -35 V, IE = 0 VCE = -2 V,IC = -0.5 A VCE = -2 V,IC = -1.5 A VCE = -2 V,IC = -1.5 A VCE(sat) IC = -2 A,IB = -0.2 A hFE Classification Rank hFE B 60 120 C 100 200 D 160 320 3 .8 0 www.kexin.com.cn 1