2SB1424

S MD Type Low VCE(sat) Transistor 2SB1424 Transistors Features Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature * Single pulse Pw=10ms. Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg Rating -20 -20 -6 -3 -5 0.5 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltae Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Output capacitance Transition frequency Symbol VCBO VCEO VEBO IcBO IEBO hFE IC= -50ìA IC= -1mA IE= -50ìA VCB= -20V VEB= -5V VCE=-2V, IC= -0.1A 120 Testconditons Min -20 -20 -6 -0.1 -0.1 390 -0.5 35 240 V pF MHz Typ Max Unit V V V A A VCE(sat) IC/IB= -2A/ -0.1A Cob fT VCB= -10V, IE=0A, f=1MHz VCE= -2V, IE=0.5A, f=100MHz hFE Classification Marking Rank hFE AEQ Q 120 270 AER R 180 390 www.kexin.com.cn 1