2SB1427

S MD Type Power Transistor 2SB1427 Transistors Features Low saturation voltage, typically VCE(sat) =-0.5V at IC/IB =-1A/-50mA. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg Rating -20 -20 -6 -2 -3 0.5 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=-50ìA IC=-1mA IE=-50ìA VCB=-16V VEB=-5V Testconditons Min -20 -20 -6 -0.5 -0.5 -0.5 390 90 30 820 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC=-1A,IB=-500mA hFE Cob fT VCE=-6V, IC=-0.5A VCE=-10V, IE=10mA, f=30MHz VCB=-10V, IE=0A, f=1MHz Marking Marking BJE www.kexin.com.cn 1