2SB1475

SMD S MD Type PNP Silicon Epitaxial Transistor 2SB1475 Transistors IC Features Super miniature package. High DC current IC(DC)=500mA max. Low VCE(sat): VCE(sat)=-60mV at -100mA 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -25 -16 -6 -500 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW 350 µs, duty cycle 2% Symbol ICBO IEBO hFE VCE(sat) Testconditons VCB = -16 V, IE = 0 VEB = -6.0 V, IC = 0 VCE = -1.0 V, IC = -100 mA IC = -100 mA, IB = -10 mA IC = -500 mA, IB = -20 mA VBE(sat) IC = -2A, IB = -0.1A VBE fT Cob VCE = -1.0 V, IC = -10 mA VCE = -3.0 V, IE = 100 mA VCB = -10 V, IE = 0 , f = 1.0 MHz 50 15 110 200 -60 -250 -0.95 -0.66 Min Typ Max -100 -100 400 -120 -400 -1.2 -0.7 mV mV V V MHz pF Unit nA nA hFE Classification Marking hFE B42 110 240 B43 190 320 B44 270 400 www.kexin.com.cn 1