2SB1571

S MD Type Silicon PNP Epitaxial Planar 2SB1571 Transistors Features Low VCE(sat): VCE(sat) -0.35 V Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) * Base Current (DC) Base Current (pulse) * Total Power Dissipation * Junction Temperature Storage temperature * PW 10 ms, Duty Cycle 50% Symbol VCBO VCEO VEBO IC(DC) Ic(Pulse) IB(DC) IB(Pulse) PT Tj Tstg Rating -50 -30 -6 -5 -8 -0.2 -0.4 2 150 -55 to +150 Unit V V V A A A A W www.kexin.com.cn 1 SMD Type 2SB1571 Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain * Base to Emitter Voltage * Collector Saturation Voltage * Collector Saturation Voltage * Base Saturation Voltage * Gain Bandwidth Product Output Capacitance Turn-on Time Storage Time Fall Time * Pulsed: PW 350 ìs, Duty Cycle 2%. Symbol ICBO IEBO hFE1 hFE2 VBE Testconditons VCB = -50 V, IE = 0 VEB = -6.0 V, IC = 0 VCE = -1.0 V, IC = -1.0 A VCE = -1.0 V, IC = -2.0 A VCE = -1.0 V, IC = -0.1 A Transistors Min Typ Max -100 -100 Unit nA nA 80 100 -0.6 200 -0.665 -0.17 -0.28 -0.89 150 100 265 400 -0.7 -0.35 -0.55 -1.2 V V V V MHz pF ns ns ns VCE(sat)1 IC = -3.0 A, IB = -0.15 A VCE(sat)2 IC = -5.0 A, IB = -0.25 A VBE(sat) IC = -3.0 A, IB = -0.15 A fT Cob ton tstg tf IC = -2.0 A, VCC = -10 V,RL = 5.0Ù, IB1 = -IB2 = -0.1 A, VCE = -10 V, IE = 0.5 A VCB = -10 V, IE = 0, f = 1.0 MHz 350 50 hFE Classification Marking hFE HX 100 200 HY 160 320 HZ 200 400 2 www.kexin.com.cn