2SB1589

S MD Type Silicon PNP Epitaxial Planar Type 2SB1589 Transistors Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating -10 -10 -7 -2 -1.5 1 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Collector-base voltage Collector-emitter voltage Emitter-base voltage Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Forward voltage Symbol ICBO VCBO VCEO VEBO hFE Testconditons VCB= -7 V, IE = 0 IC = -10 ìA, IE = 0 IC = -1 mA, IB = 0 IE = -10 ìA, IC = 0 VCE = -1 V, IC = -400 mA -10 -10 -7 200 700 -0.24 -0.35 190 6.5 1.3 V MHz pF V Min Typ Max -1 Unit ìA V V V VCE(sat) IC = -1A, IB = - 25 mA fT Cob VF VCB = -6 V, IE = 50 mA, f = 200 MHz VCB = -10V, IE = 0, f = 1 MHz IF = -500 mA Marking Marking 1U www.kexin.com.cn 1