2SB1599

S MD Type Silicon PNP Epitaxial Planar Type 2SB1599 Transistors Features Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating -50 -40 -5 -3 -0.6 1 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Collector-base voltage Collector-emitter voltage Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO ICEO IEBO VCBO VCEO hFE Testconditons VCB= -20 V, IE = 0 VCE= -12 V, IB = 0 VEB= -5 V, IC = 0 IC = -1 mA, IE = 0 IC = -10 mA, IB = 0 VCE = -5 V, IC = -1A -50 -40 50 -0.4 220 -1 -1.5 150 70 V V MHz pF Min Typ Max -1 -100 -100 Unit ìA ìA ìA V V VCE(sat) IC = -1.5A, IB = - 0.15A VBE(sat) IC = -2A, IB = - 0.2A fT Cob VCB = -5 V, IE = 0.5 A, f = 200 MHz VCB = -5V, IE = 0, f = 1 MHz hFE Classification Marking Rank hFE P 50 100 1X Q 80 160 R 100 220 www.kexin.com.cn 1