2SB1628

S MD Type PNP Silicon Epitaxial Transistor 2SB1628 Transistors Features High current capacitance. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) * Base Current (DC) Base Current (pulse) * Total Power Dissipation Junction Temperature Storage temperature * PW 10 ms, Duty Cycle 50% Symbol VCBO VCEO VEBO IC(DC) Ic(Pulse) IB(DC) IB(Pulse) PT Tj Tstg Rating -20 -16 -6 -3 -5 -0.2 -0.4 2 150 -55 to +150 Unit V V V A A A A W www.kexin.com.cn 1 SMD Type 2SB1628 Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain * Base to Emitter Voltage * Collector Saturation Voltage * Collector Saturation Voltage * Base Saturation Voltage * Gain Bandwidth Product Output Capacitance Turn-on Time Storage Time Fall Time * Pulsed: PW 350 ìs, Duty Cycle 2%. Symbol ICBO IEBO hFE1 hFE2 VBE Testconditons VCBO = -20 V, IE = 0 VEBO = -6.0 V, IC = 0 VCE = -2.0 V, IC = -0.5 A VCE = -2.0 V, IC = -3.0 A VCE = -2.0 V, IC = -0.05 A Transistors Min Typ Max -100 -100 Unit nA nA 140 70 -600 280 560 -660 -240 -350 -0.95 320 45 70 -700 -350 -550 -1.2 mV mV mV V MHz pF ns ns ns VCE(sat)1 IC = -2.0 A, IB = -0.1 A VCE(sat)2 IC = -3.0 A, IB = -0.15 A VBE(sat) IC = -2.0 A, IB = -0.1 A fT Cob ton tstg tf IC = -1.0 A, VCC = -10 V, RL = 5.0 ? , IB1 = -IB2 = -0.1 A, VCE = –3.0 V, IE = 0.5 A VCB = –10 V, IE = 0, f = 1 MHz 110 40 hFE Classification Marking hFE ZX 140 280 ZY 200 400 ZZ 280 560 2 www.kexin.com.cn