2SB1643

S MD Type Silicon PNP Epitaxial Planar Type 2SB1643 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High collector to emitter VCEO. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Base current Collector power dissipation TC = 25 Ta = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating -60 -60 -6 -3 -6 -1 40 1.3 150 -55 to +150 Unit V V V A A A W W Electrical Characteristics Ta = 25 Parameter Collector-base cutoff curent Collector-emitter cutoff curent Emitter-base cutoff current Collector-emitter voltage Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Symbol ICBO ICEO IEBO VCEO hFE Testconditons VCB = -60 V,IE = 0 VEB = -40 V,IC = 0 VEB = -6 V, IC = 0 IC = -25 mA, IB = 0 VCE = -4 V, IC = -0.5 A -60 300 700 -1 30 V MHz Min Typ Max -100 -100 -100 Unit ìA ìA ìA V VCE(sat) IC = -2 A, IB = -0.05 A fT VCE = -12 V, IC = -0.2 A , f = 10 MHz hFE Classification Rank hFE Q 300 500 P 400 700 3 .8 0 High collector power dissipation PC. www.kexin.com.cn 1