2SB624

SMD S MD Type PNP Silicon Epitaxial Transistor 2SB624 Transistors IC SOT-23 Unit: mm Features Micro package. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 High dc current gain. hFE:200TYP. (VCE=-1V, IC=-100mA) +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -30 -25 -5 -700 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Base to emitter voltage * Collector saturation voltage * Output capacitance Gain bandwidth product * Pulsed: PW 350 µs, duty cycle 2% Symbol ICBO IEBO hFE VBE Testconditons VCB = -30 V, IE = 0 VEB = -5.0 V, IC = 0 VCE = -1.0 V, IC = -100 mA VCE = -6.0 V, IC = -10 mA 110 -600 200 -640 -0.25 17 160 Min Typ Max -100 -100 400 -700 -0.6 mV V pF MHz Unit nA nA VCE(sat) IC = -700 mA, IB = -70 mA Cob fT VCB = -6.0 V, IE = 0, f = 1.0 MHz VCE = -6.0 V, IE = 10 mA hFE Classification Marking Rank hFE 1 110 180 2 135 220 BV 3 170 270 4 200 320 5 250 400 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1