2SB709A

SMD S MD Type Silicon PNP Epitaxial Planar Type 2SB709A Transistors IC Features High forward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and +0.1 2.4-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 packing. +0.1 1.3-0.1 automatic insertion through the tape packing and the magazine 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -45 -45 -7 -100 -200 200 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-base current Collector-emitter current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol VCBO VCEO VEBO ICBO ICEO hFE Testconditons IC = -10 ìA, IE = 0 IC = -2 mA, IB = 0 IE = -10 ìA, IC = 0 VCB = -20 V, IE = 0 A VCE = -10 V, IB = 0 A VCE = -10 V, IC = -2 mA 160 -0.3 80 2.7 Min -45 -45 -7 -0.1 -100 460 -0.5 V MHz pF Typ Max Unit V V V ìA ìA VCE(sat) IC = -100 mA, IB = -10 mA fT Cob VCB = -10 V, IE = 1 mA , f = 200 MHz VCB = -10V , IE = 0 , f = 1.0MHz hFE Classification Marking hFE BQ 160 260 BR 210 340 BS 290 460 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1