2SB736

SMD S MD Type PNP Silicon Epitaxial Transistor 2SB736 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Micro package. Complementary to 2SD780. High DC Current Gain: hFE = 200 TYP. (VCE = -1.0 V, IC = -50 mA) +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -60 -60 -5.0 -300 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Base to emitter voltage * Collector saturation voltage * Output capacitance Gain bandwidth product * Pulsed: PW 350 µs, duty cycle 2% Symbol ICBO IEBO hFE VBE Testconditons VCB = -50 V, IE = 0 VEB = -5.0 V, IC = 0 VCE = -1.0 V, IC = -50 mA VCE = 6.0 V, IC = -10 mA 110 -600 -660 -0.35 13 100 Min Typ Max -100 -100 400 -700 -0.6 mV V pF MHz Unit nA nA VCE(sat) IC = -300 mA, IB = -30 mA Cob fT VCB = -6.0 V, IE = 0 , f = 1.0 MHz VCE = -6.0 V, IE = 10 mA hFE Classification Marking hFE BW1 110 180 BW2 135 220 BW3 170 270 BW4 200 320 BW5 250 400 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1