2SB766

SMD S MD Type Silicon PNP Epitaxial Planar Type 2SB766,2SB766A Transistors IC Features Large collector power dissipation PC Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SB766 2SB766A Collector-emitter voltage 2SB766 2SB766A Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature VEBO IC ICP PC Tj Tstg VCEO Symbol VCBO Rating -30 -60 -25 -50 -5 -1 -1.5 -1 150 -55 to +150 V A A W V Unit V www.kexin.com.cn 1 SMD Type 2SB766,2SB766A Electrical Characteristics Ta = 25 Parameter Collector-base voltage 2SB766 2SB766A Collector-emitter voltage 2SB766 2SB766A Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VEBO ICBO hFE IE = -10ìA, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IC = -500 mA VCE = -5 V, IC = -1 A VCE(sat) IC = -500 mA, IB = -50 mA VBE(sat) IC = -500 mA, IB = -50 mA fT Cob VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz VCEO IC = -2 mA, IB = 0 Symbol VCBO Testconditons IC = -10 ìA, IE = 0 Transistors IC Min -30 -60 -25 -50 -5 Typ Max Unit V V V -0.1 nA 85 50 -0.2 -0.85 200 20 340 -0.4 -1.2 V V MHz 30 pF hFE Classification Marking Rank hFE Q 85 170 2SB766(A)/2SB766A(B) R 120 240 S 17 340 2 www.kexin.com.cn