2SB767

SMD S MD Type Silicon PNP Epitaxial Planar Type 2SB767 Transistors IC Features Large collector power dissipation PC High collector-emitter voltage (Base open) VCEO Mini type package, allowing downsizing of the equipment and automatic Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -80 -80 -5 -1 -0.5 1 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base cutoff current Collector-base voltage Collector-emitter voltage Emitter-base voltage Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE Testconditons VCB = -20 V, IE = 0 IC = -10ìA, IE = 0 IC = -100ìA, IB = 0 IE = -10 ìA, IC = 0 VCE = -10 V, IC = -150 mA -80 -80 -5 90 -0.2 0.85 120 20 30 220 -0.4 -1.2 V V MHz pF Min Typ Max -0.1 Unit ìA V V V VCE(sat) IC = -300 mA, IB = -30 mA VBE(sat) IC = -300 mA, IB = -30 mA fT Cob VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz hFE Classification Marking hFE CQ 90 155 CR 130 220 www.kexin.com.cn 1