2SB768

S MD Type Silicon PNP Transistor 2SB768 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High Voltage:VCBO=-150V 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) *1 Total Power Dissipation *2 Junction Temperature Storage Temperature *1 PW 10ms,.Duty Cycle 50% Ta=25 Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating -200 -150 -5 -2 -3 2 150 -55 to 150 Unit V V V A A W *2 when mounted on ceramic substrate of 7.5cm2 X 0.7mm Electrical Characteristics Ta = 25 Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain * Collector-to-Emitter Saturation Voltage * Gain Badnwidth Product * Pulsed :pw 350ìs,Duty Cycle 2% Symbol ICBO IEBO hFE VCE(sat) fT Testconditons VCB=-150V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-0.4A IC=-500mA, IB=-50mA VCE=-10V,IE=-0.4mA 40 80 -0.15 10 Min Typ Max -50 -50 200 -1.0 V MHz Unit ìA ìA hFE Classification Marking hFE M 40 to 80 L 60 to 120 K 100 to 200 3 .8 0 www.kexin.com.cn 1