2SB772

S MD Type PNP Silicon Power Transistor 2SB772 Features Low saturation voltage. VCE(sat) -0.5(@ IC=-2A,IB=-0.2A) Transistors Excellent hFE hFE: 60 to 400 (@VCE=-2V,IC=-1A) Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector Power dissipation TA = 25 TC = 25 Junction temperature Storage temperature range * PW 350ìS,duty cycle 2%. Tj Tstg Symbol VCBO VCEO VEBO IC Pc Rating -40 -30 -5 -3 1.0 10 150 -55 to +150 Unit V V V A W W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Output capacitance Transition frequency * Pulsed: PW 350 s, duty cycle 2% Symbol VCBO VCEO VEBO ICBO IEBO hFE Testconditons Ic=-100 A,IE=0 IC= -10 mA , IB=0 IE= -100 A IC=0 Min -40 -30 -5 -1.0 -1.0 60 160 -0.3 -1.0 55 80 400 -0.5 -2.0 V V pF MHz Typ Max Unit V V V A A VCB = -30 V, IE = 0 VEB = -6V, IC = 0 VCE = -2.0 V, IC = -1.0A * VCE(sat) IC = -2A, IB = -0.2A VBE(sat) IC = -2A, IB = -0.2A Cob fT VCB = -10 V, IE = 0,f=1.0MHz VCE = -5.0 V, IE = -0.1A,f=10MHz hFE Classification Rank hFE R 60 120 Q 100 200 P 160 320 E 200 400 www.kexin.com.cn 1