2SB792A

S MD Type Silicon PNP Epitaxial Planar Type 2SB792,2SB792A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 High collector-emitter voltage VCEO Low noise voltage NV +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SB792 2SB792A Collector-emitter voltage 2SB792 2SB792A Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature VEBO IC ICP PC Tj Tstg VCEO Symbol VCBO Rating -150 -185 -150 -185 -5 -50 -100 200 150 -55 to +150 Unit V V V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage 2SB792 2SB792A Emitter-base voltage Collector-base cutoff current Forward current transfer ratio 2SB792 2SB792A Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise voltage VCE(sat) IC = -30 mA, IB = -3 mA fT Cob NV VCE = -10 V, IC = -10 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz VCE = -10 V, IC = -1 mA, GV = 80 dB Rg = 100KÙ, Function = FLAT 200 4 150 VEBO ICBO hFE IE = -10 ìA, IC = 0 VCB = -100 V, IE = 0 VCE = -5 V, IC = -10 mA 130 130 Symbol VCEO Testconditons IC = -100 ìA, IB = 0 Min -150 -185 -5 -1 450 330 -1 V MHz pF mV Typ Max Unit V V V ìA hFE Classification Marking Rank hFE 2SB792 2SB792A IR 2FR R 130 220 IS 2FS S 185 330 T 260 450 IT +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1