2SB804

S MD Type PNP Silicon Epitaxial Transistor 2SB804 Transistors Features World standard miniature package:SOT-89 High collector to base voltage:VCBO Excellent DC current gain linearity. -100V Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current(Pulse) * Total power dissipation Junction temperature Storage temperature range * PW 10ms,duty cycle 50%. Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating -100 -80 -5 -1 -1.5 2 150 -55 to +150 Unit V V V mA mA W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW 350 ìs, duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = -100 V, IE = 0 VEB = -5.0 V, IC = 0 VCE = -2.0 V, IC = -100 mA VCE = -2.0 V, IC = -500 mA VCE(sat) IC = -500mA, IB = -50mA VBE(sat) IC = -500mA, IB = -50mA VBE fT Cob VCE = -10 V, IC = -10 mA VCE = -5.0 V, IE = 10 mA VCB = -10 V, IE = 0 , f = 1.0 MHz -600 90 25 200 80 -0.29 -0.9 -640 80 26 -0.5 -1.5 -700 V V mV MHz pF Min Typ Max -100 -100 400 Unit nA nA hFE Classification Marking hFE AW 90 180 AV 135 270 AU 200 400 www.kexin.com.cn 1