2SB805

S MD Type PNP Silicon Epitaxial Transistor 2SB805 Transistors Features High collector to emitter voltage: VCEO -100V. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) *1 Collector power dissipation Junction temperature Storage temperature *1. PW 10ms,duty cycle 50% Symbol VCBO VCEO VEBO IC IC(pu) Pc Tj Tstg Rating -100 -100 -5 -0.7 -1.2 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Output capacitance Transition frequency * PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = -100V, IE=0 VEB = -5V, IC=0 VCE =-1V , IC = -100mA VCE =-1V , IC = -5.0mA VCE(sat) IC = -500mA , IB = -50mA VBE(sat) IC = -500mA , IB = -50mA VBE Cob fT VCE =-10V , IC = -10mA VCB = -10V , IE = 0 , f = 1.0MHz VCE = -10V , IE = 10mA -550 90 45 200 200 -0.4 -0.9 -620 14 75 -0.6 -1.5 -650 V V mV pF MHz Min Typ Max -100 -100 400 Unit nA nA hFE Classification Marking hFE 90 KM 180 KL 135 270 KK 200 400 www.kexin.com.cn 1