2SB831

SMD S MD Type Silicon PNP Epitaxial 2SB831 Transistors IC SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 +0.1 1.3-0.1 Low frequency amplifier. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -25 -20 -5 -0.7 1 150 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio * Collector to emitter saturation voltage * Base to emitter voltage * * Pulse test. Symbol Testconditons Min -25 -20 -5 -1 85 240 -0.5 -1 V V Typ Max Unit V V V mA V(BR)CBO IC = -10 ìA, IE = 0 V(BR)CEO IC = -1 mA, RBE = V(BR)EBO IE = -10 ìA, IC = 0 ICBO hFE VCB = -20 V, IE = 0 VCE = -1 V, IC = -0.15 A VCE(sat) IC = -0.5 A, IB = -0.05 A VBE VCE = -1 V, IC = -0.15 A hFE Classification Marking hFE BB 85 170 BC 120 240 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1