2SB956

S MD Type Silicon PNP Epitaxial Planar Type 2SB956 Transistors Features Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -20 -20 -5 -1 -2 1 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector-base voltage Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance * Pulse measurement. 3 Symbol VCBO VEBO ICBO hFE Testconditons IC = -1 mA, IB = 0 IE = -10 ìA, IC = 0 VCB = -10 V, IE = 0 VCE = -2 V, IC = -500 mA 130 Min -20 -5 -1 280 -0.5 -1.2 200 40 V V MHz pF Typ Max Unit V V nA VCE(sat) IC = -1 A, IB = -50 mA VBE(sat) IC = -500 mA, IB = -50 mA fT Cob VCB = -6 V, IE = 50 mA, f = 200 MHz VCB = -6 V, IE = 0, f = 1 MHz hFE Classification Marking hFE HR 130 210 HS 180 280 www.kexin.com.cn 1