2SB962-Z

S MD Type PNP Silicon Epitaxial Transistor 2SB962-Z TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat): VCE(sat)=-0.3V. +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current pulse * Total power dissipation Junction temperature Storage temperature range * PW 10ms,duty cycle 50%. Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating -40 -30 -5 -3 -6 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Gain bandwidth product Output capacitance * Pulsed: PW 350 µs, duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = -30 V, IE = 0 VEB = -3.0 V, IC = 0 VCE = -2.0 V, IC = -1A VCE = -2.0 V, IC =-20mA VCE(sat) IC = -2A, IB = -0.2A VBE(sat) IC = -2A, IB = -0.2A fT Cob VCE = -5.0 V, IE = 100mA VCB = -10 V, IE = 0 , f = 1.0 MHz 60 30 160 150 -0.3 -1 80 55 -0.5 -2 V V MHz pF Min Typ Max -10 -1 400 Unit µA µA hFE Classification Rank hFE R 60 120 Q 100 200 P 160 320 E 200 400 3 .8 0 www.kexin.com.cn 1